Applied Sciences, Free Full-Text

In this paper, the edge strain relaxation of InGaN/GaN MQW micro-pillars is studied. Micro-pillar arrays with a diameter of 3–20 μm were prepared on a blue GaN LED wafer by inductively coupled plasma (ICP) etching. The peak wavelength shift caused by edge strain relaxation was tested using micro-LED pillar array room temperature photoluminescence (PL) spectrum measurements. The results show that there is a nearly 3 nm peak wavelength shift between the micro-pillar arrays, caused by a high range of the strain relaxation region in the small size LED pillar. Furthermore, a 19 μm micro-LED pillar’s Raman spectrum was employed to observe the pillar strain relaxation. It was found that the Raman E2H mode at the edge of the micro-LED pillar moved to high frequency, which verified an edge strain relaxation of = 0.1%. Then, the exact strain and peak wavelength distribution of the InGaN quantum wells were simulated by the finite element method, which provides effective verification of our PL and Raman strain relaxation analysis. The results and methods in this paper provide good references for the design and analysis of small-size micro-LED devices.

Applied Sciences, Free Full-Text

All courses CELLPLUS@OUM

Applied Sciences, Free Full-Text, g1 f1500

Applied Sciences, Free Full-Text, driving simulator 2009

Logical LuxuryApplied Sciences, Free Full-Text, truck vibration at

Applied Science and Technology Full Text

Cell-Free Synthetic Biology

Applied Sciences, Free Full-Text, g1 f1500

Applied Sciences, Free Full-Text, g1 f1800

Applied Sciences, Free Full-Text

Applied Sciences, Free Full-Text, driving simulator 2009

Applied Sciences, Free Full-Text, Synthetic Dye

Access research papers on Web of Science in one click.