TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

I On /I Off ratio comparison of this work with literature

Effect of 3 nm gate length scaling in junctionless double

Device structure for 10 nm DG In0.53Ga0.47As NMOSFET with SiO2 +

I On /I Off ratio comparison of this work with literature

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

Comparison between the current in a Ge quantum-well diode

ID versus VDS curves of TM DSG SiNT MOSFET with

Schematic of the real-space representation of an electron device

Anil VOHRA, Professor (Full), M.Sc., Ph.D

Effect of 3 nm gate length scaling in junctionless double

SANJAY, Ph.D., Kurukshetra University, Ambāla, KUK